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RRR015P03
l Thermal resistance
Data Sheet
Parameter
Thermal resistance, junction - ambient
Symbol
R thJA *3
R thJA *4
Min.
-
-
Values
Typ.
-
-
Max.
125
231
Unit
°C/W
°C/W
l Electrical characteristics (T a = 25°C)
Parameter
Drain - Source breakdown
voltage
Symbol
V (BR)DSS
Conditions
V GS = 0V, I D = - 1mA
Min.
- 30
Values
Typ.
-
Max.
-
Unit
V
Breakdown voltage
temperature coefficient
ΔV (BR)DSS I D = - 1mA
ΔT j referenced to 25°C
-
- 25
-
mV/°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
I DSS
I GSS
V GS (th)
ΔV (GS)th
ΔT j
V DS = - 30V, V GS = 0V
V GS = ? 20V, V DS = 0V
V DS = - 10V, I D = - 1mA
I D = - 1mA
referenced to 25°C
-
-
- 1.0
-
-
-
-
3.9
- 1
? 10
- 2.5
-
m A
m A
V
mV/°C
V GS = - 10V, I D = - 1.5A
-
115
160
Static drain - source
on - state resistance
R DS(on)
*5
V GS = - 4.5V, I D = - 0.7A
V GS = - 4.0V, I D = - 0.7A
-
-
170
190
240
270
m W
V GS = - 10V, I D = - 1.5A, T j =125°C
-
175
245
Gate input resistannce
Transconductance
R G
g fs *5
f = 1MHz, open drain
V DS = - 10V, I D = - 1.5A
-
1.2
20
3.0
-
-
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw ? 10 m s, Duty cycle ? 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
*5 Pulsed
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
2/11
2012.09 - Rev.B
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